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December 2013
FC P4 N60
N-Channel SuperFET ? MOSFET
600 V, 3.9 A, 1.2 Ω
Features
? 650 V @ T J = 150°C
? Typ. R DS(on) = 1.0 Ω
? Ultra Low Gate Charge (Typ. Q g = 12.8 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 32 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
SuperFET ? MOSFET is Fairchild Semiconductor’s first gener-
ation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? LCD / LED / PDP TV and Monitor Lighting
? Solar Inverter
? AC-DC Power Supply
D
GD
S
TO-220
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FCP4N60
600
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
3.9
2.5
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
11.7
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
128
3.9
5.0
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate A bove 25 ° C
50
0.4
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds .
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
Parameter
FC P4 N60
Unit
R θ JC
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.5
83
o
C/W
R θ JA
?2008 Fairchild Semiconductor Corporation
FCP4N60 Rev. C1
1
www.fairchildsemi.com
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